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this is information on a product in full production. july 2014 docid022522 rev 5 1/16 16 STW88N65M5 stwa88n65m5 n-channel 650 v, 0.024 ? typ., 84 a, mdmesh? v power mosfets in to-247 and to-247 long leads packages datasheet - production data figure 1. internal schematic diagram features ? worldwide best r ds(on) in to-247 ? higher v dss rating ? higher dv/dt capability ? excellent switching performance ? easy to drive ? 100% avalanche tested applications ? high efficiency switching applications: ?servers ?pv inverters ? telecom infrastructure ? multi kw battery chargers description these devices are n-channel mdmesh? v power mosfets based on an innovative proprietary vertical process technology, which is combined with stmicroelectronics? well-known powermesh? horizontal layout structure. the resulting product has extremely low on- resistance, which is unmatched among silicon- based power mosfets, making it especially suitable for applications which require superior power density and outstanding efficiency. to-247 1 2 3 to-247 long leads $0y ' * 6 order codes v dss @t jmax. r ds(on) max. i d STW88N65M5 710 v 0.029 ? 84 a stwa88n65m5 table 1. device summary order codes marking packages packaging STW88N65M5 88n65m5 to-247 tube stwa88n65m5 to-247 long leads www.st.com
contents STW88N65M5, stwa88n65m5 2/16 docid022522 rev 5 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
docid022522 rev 5 3/16 STW88N65M5, stwa88n65m5 electrical ratings 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v gs gate- source voltage 25 v i d drain current (continuous) at t c = 25 c 84 a i d drain current (continuous) at t c = 100 c 50.5 a i dm (1) 1. pulse width limited by safe operating area drain current (pulsed) 336 a p tot total dissipation at t c = 25 c 450 w i ar max current during repetitive or single pulse avalanche (pulse width limited by t jmax ) 15 a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 2000 mj dv/dt (2) 2. i sd 84 a, di/dt = 400 a/s, peak v ds < v (br)dss , v dd = 400 v peak diode recovery voltage slope 15 v/ns t stg storage temperature - 55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case max 0.28 c/w r thj-amb thermal resistance junction-ambient max 50 c/w
electrical characteristics STW88N65M5, stwa88n65m5 4/16 docid022522 rev 5 2 electrical characteristics (t c = 25 c unless otherwise specified) table 4. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage v gs = 0, i d = 1 ma 650 v i dss zero gate voltage drain current v gs = 0, v ds = 650 v 1 a v gs = 0, v ds = 650 v, t c =125 c 100 a i gss gate-body leakage current v ds = 0, v gs = 25 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 3 4 5 v r ds(on) static drain-source on- resistance v gs = 10 v, i d = 42 a 0.024 0.029 ? table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v gs = 0, v ds = 100 v, f = 1 mhz -8825-pf c oss output capacitance - 223 - pf c rss reverse transfer capacitance -11-pf c o(tr) (1) 1. c o(tr) is a constant capacitance value that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . equivalent capacitance time related v gs = 0, v ds = 0 to 520 v - 778 - pf c o(er) (2) 2. c o(er) is a constant capacitance value that gives the same stored energy as c oss while v ds is rising from 0 to 80% v dss . equivalent capacitance energy related v gs = 0, v ds = 0 to 520 v - 202 - pf r g intrinsic gate resistance f = 1 mhz open drain - 1.79 - ? q g total gate charge v dd = 520 v, i d = 42 a, v gs = 10 v (see figure 16 ) -204-nc q gs gate-source charge - 51 - nc q gd gate-drain charge - 84 - nc
docid022522 rev 5 5/16 STW88N65M5, stwa88n65m5 electrical characteristics table 6. switching times symbol parameter test conditions min. typ. max. unit t d(v) voltage delay time v dd = 400 v, i d = 56 a, r g = 4.7 ? , v gs = 10 v (see figure 17 ) (see figure 20 ) -141-ns t r(v) voltage rise time - 16 - ns t f(i) current fall time - 29 - ns t c(off) crossing time - 56 - ns table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current -84a i sdm (1) 1. pulse width limited by safe operating area source-drain current (pulsed) - 336 a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 84 a, v gs = 0 - 1.5 v t rr reverse recovery time i sd = 84 a, di/dt = 100 a/s v dd = 100 v (see figure 17 ) - 544 ns q rr reverse recovery charge - 14 c i rrm reverse recovery current - 50 a t rr reverse recovery time i sd = 84 a, di/dt = 100 a/s v dd = 100 v, t j = 150 c (see figure 17 ) - 660 ns q rr reverse recovery charge - 20 c i rrm reverse recovery current - 60 a
electrical characteristics STW88N65M5, stwa88n65m5 6/16 docid022522 rev 5 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. gate charge vs gate-source voltage figure 7. static drain-source on resistance i d 100 10 1 0.1 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 100s 1ms 10ms tj=150c tc=25c single pulse am10392v1 i d 50 0 0 10 v ds (v) 20 (a) 5 15 25 100 8v 6v 7v v gs =9, 10v 150 200 250 am10393v1 i d 75 50 25 0 3 5 v gs (v) 7 (a) 4 6 100 125 150 175 v ds =30v 8 9 200 225 250 am10394v1 v gs 6 4 2 0 0 50 q g (nc) (v) 200 8 100 150 10 v dd =520v i d =42a 12 300 200 100 0 400 500 v ds v ds (v) 14 am10395v1 r ds(on) 0.026 0.024 0.022 0.020 0 20 i d (a) ( ) 10 30 v gs =10v 50 40 60 70 80 am10396v1
docid022522 rev 5 7/16 STW88N65M5, stwa88n65m5 electrical characteristics figure 8. capacitance variations figure 9. output capacitance stored energy figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on-resistance vs temperature figure 12. source-drain diode forward characteristics figure 13. normalized v (br)dss vs temperature c 1000 100 10 1 0.1 10 v ds (v) (pf) 1 10000 100 ciss coss crss 100000 am10397v1 e oss 15 10 5 0 0 100 v ds (v) (j) 400 20 200 300 25 30 500 600 35 40 am10398v1 v gs(th) 1.00 0.90 0.80 0.70 -50 0 t j (c) (norm) -25 1.10 75 25 50 100 i d =250a am04972v1 r ds(on) 1.7 1.5 0.9 0.5 -50 0 t j (c) (norm) -25 75 25 50 100 0.7 1.1 1.3 1.9 2.1 125 i d = 42 a v gs = 10 v am05501v2 v sd 0 20 i sd (a) (v) 10 50 30 40 0 0.2 0.4 0.6 0.8 1.0 1.2 t j =-50c t j =150c t j =25c am04974v1 v (br)dss -50 0 t j (c) (norm) -25 75 25 50 100 0.92 0.94 0.96 0.98 1.00 1.04 1.06 1.02 i d = 1ma 1.08 am10399v1
electrical characteristics STW88N65M5, stwa88n65m5 8/16 docid022522 rev 5 figure 14. switching losses vs gate resistance (1) 1. eon including reverse recovery of a sic diode e 0 0 20 r g ( ) ( j) 10 30 1000 2000 40 i d =56a v dd =400v eon eoff 3000 v gs =10v t j =25c am11171v1
docid022522 rev 5 9/16 STW88N65M5, stwa88n65m5 test circuits 3 test circuits figure 15. switching times test circuit for resistive load figure 16. gate charge test circuit figure 17. test circuit for inductive load switching and diode recovery times figure 18. unclamped inductive load test circuit figure 19. unclamped inductive waveform figure 20. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd am01472v1 v (br)dss v dd v dd v d i dm i d $0y ,g 9jv 9gv 9gv ,g 9jv rq 7ghod\rii 7idoo 7ulvh 7f u r v v r y h u 9gv ,g 9jv,w rq rii 7idoo 7ulvh &rqfhswzdyhirupiru,qgxfwlyh/rdg7xuqrii
package mechanical data STW88N65M5, stwa88n65m5 10/16 docid022522 rev 5 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
docid022522 rev 5 11/16 STW88N65M5, stwa88n65m5 package mechanical data figure 21. to-247 drawing 0075325_g
package mechanical data STW88N65M5, stwa88n65m5 12/16 docid022522 rev 5 table 8. to-247 mechanical data dim. mm. min. typ. max. a 4.85 5.15 a1 2.20 2.60 b1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 d 19.85 20.15 e 15.45 15.75 e 5.30 5.45 5.60 l 14.20 14.80 l1 3.70 4.30 l2 18.50 ? p 3.55 3.65 ? r 4.50 5.50 s 5.30 5.50 5.70
docid022522 rev 5 13/16 STW88N65M5, stwa88n65m5 package mechanical data figure 22. to-247 long leads drawing 7395426_g
package mechanical data STW88N65M5, stwa88n65m5 14/16 docid022522 rev 5 table 9. to-247 long leads mechanical data dim. mm min. typ. max. a4.90 5.15 d1.85 2.10 e0.55 0.67 f1.07 1.32 f1 1.90 2.38 f2 2.87 3.38 g 10.90 bsc h 15.77 16.02 l 20.82 21.07 l1 4.16 4.47 l2 5.49 5.74 l3 20.05 20.30 l4 3.68 3.93 l5 6.04 6.29 m2.25 2.55 v 10 v1 3 v3 20 dia. 3.55 3.66
docid022522 rev 5 15/16 STW88N65M5, stwa88n65m5 revision history 5 revision history table 10. document revision history date revision changes 23-nov-2011 1 first release. 09-dec-2011 2 document status promoted from preliminary data to datasheet. 12-jun-2012 3 updated title on the cover page. 30-nov-2012 4 added new part number: stwa88n65m5 updated: section 4: package mechanical data 16-jul-2014 5 ? updated: figure 4 and 5 ? minor text changes
STW88N65M5, stwa88n65m5 16/16 docid022522 rev 5 important notice ? please read carefully stmicroelectronics nv and its subsidiaries (?st?) reserve the right to make changes, corrections, enhancements, modifications, and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant in formation on st products before placing orders. st products are sold pursuant to st?s terms and conditions of sale in place at the time of o rder acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and st assumes no liability for application assistance or the design of purchasers? products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information set forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2014 stmicroelectronics ? all rights reserved

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